Top > Products > PHM >Cl
2
ICP/Etching reactor
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Description of method
Input
Output
Examples
Validation(1) in CCP/GEC reactor
Validation(2) in CCP/GEC reactor
SF
6
ICP/Etching reactor
Cl
2
ICP/Etching reactor
C
2
H
2
ICP/CVD reactor
Discharge in PDP cell
Example
Cl
2
ICP/Etching reactor
Cl
2
ICP/Etching reactor
Computational conditions
Model
Reference : M. Shiozawa and K. Nanbu,"Coupling of plasma and flow in materials processing", Thin Solid Films, Vol.457,pp.48-54,2004
Results
Electron density
Electron temperature
Plasma potential
EEDF(Electron energy distribution function)
Power deposition
Azimuthal electric field
Cl
2
(+)Ion density
Cl(+)Ion density
Cl(-)Ion density
Cl
2
density
Cl density
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