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Description of method
Input
Output
Multi layer film PVD
Deposition and sputtering
SiO2 etching by Fluorocarbon plasma
Comparison of profile with solid SiO2 and porous SiO2
Si etching by Bosch process
Example
Multyi layer film PVD
Multi layer film PVD
Computational conditions
The energy and angular distribution of inflow partciles to be adsorbed are 10 [eV] and cos(theta)^4, respectively.
The number of inflow species is three.
The number of inflow simulated particles is 5M for each species.
Results
Cpu timeFIntel Xeon 3.8GHz, 150[s]
Incident angular distribution
Film thickness(T=200[s])
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