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  • SiO2 etching by Fluorocarbon plasma

SiO2 etching by Fluorocarbon plasma

Computational conditions

  • 34 reactions including generation of complexes and polymers, ion assist etching are used.
  • SiO2CxFy is the precursor to etching.

Initial profile

Initial profile

Results

T=120 [s] T=240 [s]
SiO2 layer SiO2 layer
Polymer layer Polymer layer
Solid layer Solid layer


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