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Comparison of profile with solid SiO2 and porous SiO2
Computational conditions
- The width and the thickness of resist are 50[nm] and 70[nm], respectively.
The thickness of Si of substrate bottom is 50[nm].
- Etching by Fluorocarbon plasma
- 34 reactions including generation of comlexes and polymers, ion assist etching are used.
- SiO2CxFy is the precursor to etching.
- Average and Standard deviation of pore of porous SiO2 are 6[nm] and 2[nm], respectively.
Occupancy ratio of pore is 40%.
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Initial profiles
| Solid SiO2 |
Porous SiO2 |
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Results
| At 10 [s] |
At 20 [s] |
At 30 [s] |
| Polymer layer |
Polymer layer |
Polymer layer |
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| Solid layer |
Solid layer |
Solid layer |
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| Polymer layer |
Polymer layer |
Polymer layer |
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| Solid layer |
Solid layer |
Solid layer |
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