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  • Si etching by Ar/Cl2 plasma and comparison with FPSM2D

Si etching by Ar/Cl2 plasma and comparison with FPSM2D

Computational conditions

  • The width,thickness of resist and thickness of Si substrate are 0.3[um],0.4[um] and 2[um],respectively in FPSM2D.
  • The diameter of hole is 0.4[um] in hole etching by FPSM3D(1/2 model to z direction).
  • The width and length of trench are 0.4[um] and 0.2[um], respectively in trench etching by FPSM3D(1/2 model to z direction). the thickness of resist and SI substrate are same as above.
  • The reflection model of incident ions on the resist depend on the incident angle and energy. But no physical and chemical reactions between radicals,ions and the resist are assumed.
  • The 17 kinds of physical/chemical reactions including ion assist etching between Si substrate and incident particles are considered.
  • Ion and radical information, number of reactive kinds ans reaction probabilities are same in all simulations.

Results

  • Results of FPSM2D
  • The etch rate is about 90[nm/min]
Initial profile At 900 [s]
Initial profile At 900 [s]
  • Results of FPSM3D
  • The etch rate is about 100 [nm/min].
Initial profile(Hole) At 300 [s] At 900 [s]
Initial profile(Hole) At 300 [s] At 900 [s]
Initial profile(Trench) At 300 [s] At 900 [s]
Initial profile(Trench) At 300 [s] At 900 [s]
  • Each cross section profile at 900 [s]
(Hole) x=0.5[um] (Tranch) x=0.5[um] (Hole) z=0[um] (Trench) z=0[um]
(Hole) x=0.5[um] (Trench) x=0.5[um] (Hole) z=0[um] (Trench) z=0[um]
(Hole）y=1.95[um] (Trench）y=1.95[um]
y=1.95[um] y=1.95[um]
(Hole）y=1.5[um] (Trench）y=1.5[um]
y=1.5[um] y=1.5[um]
(Hole）y=0.6[um] (Trench）y=0.6[um]
y=0.6[um] y=0.6[um]

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