Sputtering simulation Module
SPUTSM is a module to compute sputtered particle flux, angular distribution and energy distribution of sputtered particles by using SASAMAL and the result such as incident ion flux, ion energy and incident angle of ions from PIC-MCCM.
Description
Computational method of SPUTSM is same as SASAMAL since SPUTSM consists of SASAMAL for an engine. Practical analysis of the motion of sputtered particle should be done by the following manner combining with three or four modules in PEGASUS. In advance, if magnetron sputtering reactor would be used, MSSM would be used to compute magneto-static field.
- Plasma simulation by PIC-MCCM
- At first, PIC-MCCM should be used to compute ion flux, ion energy and incident angle of ions to the target.
- Simulation to get the information concerning the sputtered particles by
SPUTSM
- Second, SPUTSM should be used to compute sputtered particle flux, sputtered angular distribution and sputtered energy of sputtered neutral particles.
- Rarefied gas simulation by DSMCM
- At last, DSMCM should be used to compute the motion of sputtered particles in the reactor, neutral particle flux onto the substrate and thickness distribution by particle deposition on the substrate.
So, SPUTSM is an interface module to compute whole of sputtering simulation through above three steps of which core module is SASAMAL.
Input data
- Specify information of incident ions to the target as the result from PIC-MCCM
- Specify information of the target materials
Output data
- Sputtered particle flux, angle and energy distribution of sputtered particles.
Example
- 3D CCP plasma
- Ion beam path calculation
- Benard flow
- Crossing flow of vertical board
- Taylor-Couette flow
- Flow field of wing edge
- Unbalanced magnetron sputtering system
- Planar magnetron sputtering sysmte
- Coaxial cylinder magnetron
- Analysis of a Magnetron Sputtering Equipment
- DC magnetron sputtering equipment (1)
- DC magnetron sputtering equipment (2)
- 3D calculation of a magnetron sputtering equipment
- Self-ionized sputtering
- Plasma parameter analysis in a RF magnetron sputtering equipment
- Sputtering particle transfer in a DC magnetron sputtering equipment
- Magnetic field analysis in a device having magnetic field coils
- Magnetic field analysis in a magnetron sputtering device
- Rarefied gas flow analysis in a CVD equipment with shower head structure
- Validation (1) in CCP/GEC reactor.
- Validation (2) in CCP/GEC reactor
- Plasma calculation in a GEC Reference Cell type device
- PIC-MCCM and DSMCM coupling calculation
- SF6 ICP /Etching reactor
- Cl2 ICP/Etching reactor
- C2H2 ICP/CVD reactor
- Discharge in a PDP cell
- Comparison experiment and simulation for film thickness in vacuum evaporation equipment
- Verification of vacuum evaporation film thickness distribution
- Mixed gas simulation
- Verification of Clausing's factor
- Multi layer film PVD
- Deposition and sputtering
- SiO2 etching by Fluorocarbon plasma
- Comparison of profile with solid SiO2 and porous SiO2
- Si etching by Bosch process
- Si etching by Ar/Cl2 plasma and comparison with FPSM2D
- Orion atmospheric reentry simulation
- Ar/Cl2 mixture gas flow
- Flow around square cylinder
- Flow field (Specular reflection)
- Flow field (diffuse reflection)
- SASAMAL calculation example
- SMCSM calculation example