Plasma parameter analysis in a RF magnetron sputtering equipment

Computational conditions

Plasma parameter analysis in a RF magnetron sputtering equipment
  • Results of PIC-MCCM calculation and reference J.Vac.Sci.Technol.A 19(3)838 are compared
  • RF magnetron, Vrf = 200[V], frequency 13.56[MHz]
  • Residual magnetic flux density of paermanet magnets 0.2[T] - 0.5[T]
  • Distance of target and substrate 2.0[cm]
  • Ar pressure 5[mTorr]
  • 2D cylindrical coordinates

Result

  • Time avaraged electron density distribution (0.35[T])

    Time avaraged electron density distribution (0.35[T])

  • Time averaged electric potential distribution (0.35[T])

    Time averaged electric potential distribution (0.35[T])

  • Axial Electron density distributuon, results of the reference

    Axial Electron density distributuon, results of the reference

  • Axial electron density distribution, PIC-MCCM results

    Axial electron density distribution, PIC-MCCM results

  • Ion flux distribution on target, results of the reference

    Ion flux distribution on target, results of the reference

  • Ion flux distribution on target, PIC-MCCM results

    Ion flux distribution on target, PIC-MCCM results

PIC-MCCM results