3D calculation of a magnetron sputtering equipment

Computational conditions

3D calculation of a magnetron sputtering equipment
  • DC magnetron sputtering equipment
  • Residual magnetic flux density 1.0[T], magnetic flux density of parallel direction on the target 500[G]
  • Ar 0.5[Pa]
  • Vdc = -300[V]
  • 3D cartesian coordinate

Result

  • 磁束密度分布

    磁束密度分布

  • Electron density (x-y plane)

    Electron density (x-y plane)

  • Electron density (x-z plane)

    Electron density (x-z plane)

  • Electric potential (x-y plane)

    Electric potential (x-y plane)

  • Electric potential (x-z plane)

    Electric potential (x-z plane)

  • Ion density (x-y plane)

    Ion density (x-y plane)

  • Ion flux on the target surface

    Ion flux on the target surface

  • Ion flux distribution on the target

    Ion flux distribution on the target