Comparison of profile with solid SiO2 and porous SiO2

Computational conditions

  • The width and the thickness of resist are 50[nm] and 70[nm], respectively. The thickness of Si of substrate bottom is 50[nm].
  • Etching by Fluorocarbon plasma
  • 34 reactions including generation of comlexes and polymers, ion assist etching are used.
  • SiO2CxFy is the precursor to etching.
  • Average and Standard deviation of pore of porous SiO2 are 6[nm] and 2[nm], respectively. Occupancy ratio of pore is 40%.

Result

  • Solid SiO2 initial pforile

    Solid SiO2 initial pforile

  • Porous SiO2 initial profile

    Porous SiO2 initial profile

  • Polymer layer at 10[s]

    Polymer layer at 10[s]

  • Polymer layer at 20[s]

    Polymer layer at 20[s]

  • Polymer layer at 30[s]

    Polymer layer at 30[s]

  • Solid layer at 10[s]

    Solid layer at 10[s]

  • Solid layer at 20[s]

    Solid layer at 20[s]

  • Solid layer at 30[s]

    Solid layer at 30[s]

  • Polymer layer at 10[s]

    Polymer layer at 10[s]

  • Polymer layer at 20[s]

    Polymer layer at 20[s]

  • Polymer layer at 30[s]

    Polymer layer at 30[s]

  • Porous layer at 10[s]

    Porous layer at 10[s]

  • Porous layer at 20[s]

    Porous layer at 20[s]

  • Porous layer at 30[s]

    Porous layer at 30[s]