3D CCP plasma

Computational conditions

3D CCP plasma
  • Gas Ar 50mTorr
  • Electrode Vrf=100V, 13.56MHz
  • Distance between electrode and substrate 30mm

Result

  • Electron density [/m3]

    Electron density [/m3]

  • Electron density [/m3]

    Electron density [/m3]

  • Electron density [/m3]

    Electron density [/m3]

  • Electron density [/m3]

    Electron density [/m3]

  • Electric potential [V]

    Electric potential [V]

  • Electric potential [V]

    Electric potential [V]

  • Electric potential [V]

    Electric potential [V]

  • Electric potential [V]

    Electric potential [V]

A three-dimensional calculation of CCP plasma is performed.

3.5Gbyte of memory is required with mesh size is 200x100x90. After 30μsec of simulated time, the plasma reached at a steady state. It take about 30 days to calculate that 30μsec with Intel Xeon E5507@2.27GHz CPU.